Growth of AlGaN Alloys

This work was conducted in collaboration with

Marek Skowronski, Minsueb Shin, and Seungyook Min of the Department of Materials Science and Engineering

and with the invaluable contributions of

A.Y. Polyakov (returned to his home institution in Moscow)

The objective of this work was to understand the growth, doping, and defects in GaN and AlGaN alloys. Growth of epitaxial layers was performed by OMVPE. The specific application of interest was the solar-blind UV detector.

Pictures of the Thomas Swan OMVPE system used in this work are found below:

1. overall view of the system

omcvd
 
2. Detail of the two-flow reactor
reactor